Blar i NTNU Open på forfatter "Abuishmais, Ibrahim"
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SiC Power Diodes and Junction Field-Effect Transistors: Testing, Characterization, Modelling and Applications
Abuishmais, Ibrahim (Doktoravhandlinger ved NTNU, 1503-8181; 2012:268, Doctoral thesis, 2012)Power electronic devices are the most important element in any power electronic system. In the last decade, silicon carbide-based devices have emerged as an alternative to silicon-based devices promising a new era in power ... -
Silicon Carbide Technology for Grid Integrated Photovoltaic Applications: Dynamic Characterization of Silicon Carbide Transistors.
Tiwari, Subhadra (Master thesis, 2011)For the endorsement of the study of potential utilization of the emerging silicon carbide (SiC) devices, three SiC active switches, namely SJEP120R063 (1200V, 63 mohm) SiC JFET manufactured by Semisouth, BT1206AC-P1 (1200V, ...